Heteroepitaxial 96x128 Lead Chalcogenide on Silicon Infrared Focal Plane Array for Thermal Imaging
The realization of a 2-d narrow gap IR-FPA on a Si-substrate containing the active addressing electronics: A 96x128 array with 75 µm pitch for row-by row electronic scanning and parallel read-out of the line addressed. Photovoltaic sensors in the layers.
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